BiFeO3 thin films has been successfully grown on a quartz substrate using the chemical solution deposition (CSD) method. X-ray diffraction (XRD) used to determine the microstructure of BFO. The morphology and transmittance of BFO thin film were studied using SEM and UV-VIS. Deposition of the BiFeO3 thin film with pre-annealing in air and variation of annealing temperature showed that the increase in annealing temperature caused crystallinity to be higher and crystallite size to increase. High annealing temperature results in a larger grain size and lower thickness. Deposition of the BiFeO3 thin film with pre-annealing variation showed that BiFeO3 with pre-annealing in air had a higher crystallinity compared with in O2. The crystallite size of BiFeO3 with pre-annealing in O2 is greater than pre-annealing in air. BiFeO3 with pre-annealing in air has a smaller grain size and greater thickness compared to preannealing in O2. BiFeO3 band gap with pre-annealing in air and variation of annealing temperature were obtained 1.4-3.5 eV. While the BiFeO3 band gap with pre-annealing variation was obtained from 2.3-2.7 eV.

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BiFeO3 films were deposited on quartz substrate using chemical solution deposition (CSD) and spin coating techniques with variations of rotational speed (1000 rpm, 2000 rpm, and 3000 rpm) and several films (4 layers and 8 layers). It characterized microstructure of films using X-Ray Diffraction (XRD), morphology, and cross-section using SEM and optical properties using UV-Vis. The results of characterization showed that an enhancement rotational speed causes the intensity of crystal field orientation to decrease, crystallite size, and crystallinity are the same. Surface morphology is getting smoother, flatter, lower porosity and the grain to be homogeneous with thinner thickness. Addition on the number of films causes higher intensity, crystallite size and crystallinity are the same. The film gets thicker, the morphology gets rough, and the boundaries between grains become clearer. Increasing the rotational speed and number of films causes the refractive index and extinction coefficient to be smaller. The light disperses measurement shows a linear relationship between photon energy and refractive index. Energy band gap generated between 2.2-2.5 eV.

Bismuth Ferrite (BFO) film with a low bandgap value is a promising candidate for photovoltaic applications. This study discussed the effects of film thickness on the microstructure and optical properties of BFO films. BFO films were deposited on the Quartz-Silicon substrates using the chemical solution deposition (CSD) method. The thickness variation was conducted by varying the deposited layer number which correspond to the thickness values of 252 and 405 nm, respectively. The XRD analysis showed that increasing of films thickness had no significant effect on the crystal structure. It revealed that the XRD peak intensities increase, however, the lattice parameters, crystallite size, and crystallinity are relatively in the close values as the increasing films thickness. The Scanning Electron Microscopy (SEM) analysis exhibited the larger grain size of the BFO films with the increasing films thickness. According to the UV-Vis spectrophotometer results, the bandgap values reduced from 2.48 eV to 2.5 eV as the thicker film. Finally, The I-V curve presented that the higher films thickness induced the higher efficiency of the BFO film from 0.97 % to 2.1%. The BFO film with higher thickness could exhibit the better performance for photovoltaic application.