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The time differential perturbed angular correlation technique was applied to study the electric quadrupole coupling of 111Cd in the II-VI semiconductor CdS (20 K≤T≤1000 K). Two kinds of sample preparation were used: implantation and diffusion. Obtained results for the regular lattice sites were independent of the preparation. The measured electric field gradient (EFG) was between 6.7±0.4 MHz and 9.1±0.2 MHz. Data were confirmed by point-charge calculations. Implantation however caused a second EFG (≊78 MHz) that was assigned to a defect due to the preceding irradiation.

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