This paper explores the possibility of using AlN/sapphire piezoelectric bilayer structures for high-temperature SAW applications. To determine the temperature stability of AlN, homemade AlN/sapphire samples are annealed in air atmosphere for 2 to 20 h at temperatures from 700 to 1000°C. Ex situ X-ray diffraction measurements reveal that the microstructure of the thin film is not affected by temperatures below 1000°C. Ellipsometry and secondary ion mass spectroscopy investigations attest that AlN/sapphire is reliable up to 700°C. Beyond this temperature, both methods indicate ongoing surface oxidation of AlN. Additionally, Pt/Ta and Al interdigital transducers are patterned on the surface of the AlN film. The resulting SAW devices are characterized up to 500°C and 300°C, respectively, showing reliable frequency response and a large, quasi-constant temperature sensitivity, with a first-order temperature coefficient of frequency around -75 ppm/°C. Between room temperature and 300°C, both electromechanical coupling coefficient K(2) and propagation losses increase, so the evolution of delay lines' insertion losses with temperature strongly depends on the length of the propagation path.

In this work, we present a two-dimensional Finite Element Method (2D-FEM) model implemented on a commercial software, COMSOL Multiphysics, that is used to predict the high temperature behavior of surface acoustic wave sensors based on layered structures. The model was validated by using a comparative study between experimental and simulated results. Here, surface acoustic wave (SAW) sensors consist in one-port synchronous resonators, based on the Pt/AlN/Sapphire structure and operating in the 2.45-GHz Industrial, scientific and medical (ISM) band. Experimental characterizations were carried out using a specific probe station that can perform calibrated measurements from room temperature to 500 °C. In our model, we consider a pre-validated set of physical constants of AlN and Sapphire and we take into account the existence of propagation losses in the studied structure. Our results show a very good agreement between the simulation and experiments in the full range of investigated temperatures, and for all key parameters of the SAW sensor such as insertion losses, resonance frequency, electromechanical factor of the structure (k2) and quality factor (Q). Our study shows that k2 increases with the temperature, while Q decreases. The resonance frequency variation with temperature shows a good linearity, which is very useful for temperature sensing applications. The measured value of the temperature coefficient of frequency (TCF) is equal to −38.6 ppm/°C, which is consistent with the numerical predictions.

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Modeling techniques of P-N junctions have been applied for studying charge transport phenomena in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damage in the integral body-drain junction. A large increase of the space charge recombination current is related to band-gap localized radiation-induced defects.