In this paper a statistically significant study of 1096 individual GaN nanowire (NW) devices is presented. We have correlated the effects of changing growth parameters for hot-wall chemically-vapour-deposited (HW-CVD) NWs fabricated via the vapour-liquid-solid mechanism. We first describe an optical lithographic method for creating Ohmic contacts to NW field effect transistors with both top and bottom electrostatic gates to characterize carrier density and mobility. Multiprobe measurements show that carrier modulation occurs in the channel and is not a contact effect. We then show that NW fabrication runs with nominally identical growth parameters yield similar electrical results across sample populations of >50 devices. By systematically altering the growth parameters we were able to decrease the average carrier concentration for these as-grown GaN NWs ∼10-fold, from 2.29 × 10 20 to 2.45 × 10 19 cm −3 , and successfully elucidate the parameters that exert the strongest influence on wire quality. Furthermore, this study shows that nitrogen vacancies, and not oxygen impurities, are the dominant intrinsic dopant in HW-CVD GaN NWs.

In-plane angular magnetoresistivity Deltarho(anis)(ab) measurements were made on Y(1-x)Pr(x)Ba(2)Cu(3)O(7-delta) single crystals in the pseudogap region. For x>/=0.2 single crystals, Deltarho(anis)(ab)(theta) displays a deviation from the typical quasiparticle contribution (proportional, sin((2)theta) for temperatures smaller than a certain value T(phi) in the pseudogap region. This deviation is consistent with a flux-flow type contribution to angular magnetoresistivity, indicating the presence of vortexlike excitations above the zero-field critical temperature in the pseudogap region.

Graphene nanoribbons (GNRs) would be the ideal building blocks for all carbon electronics; however, many challenges remain in developing an appropriate nanolithography that generates high-quality ribbons in registry with other devices. Here we report direct and local fabrication of GNRs by thermochemical nanolithography, which uses a heated AFM probe to locally convert highly insulating graphene fluoride to conductive graphene. Chemically isolated GNRs as narrow as 40 nm show p-doping behavior and sheet resistances as low as 22.9 KΩ/□ in air, only approximately 10× higher than that of pristine graphene. The impact of probe temperature and speed are examined as well as the variable-temperature transport properties of the GNR.

We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 • C. Post-annealing at temperatures above 300 • C results in a significant decrease of the tunneling conductance of thermallygrown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 • C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theory of direct tunneling shows that the annealing of thermally-grown oxides at temperatures above 300 • C results in a substantial increase of their average tunnel barriers height, from ∼1.8 eV to ∼2.45 eV, versus the practically unchanged height of ∼2.0 eV for the plasma-grown layers. This difference, together with high endurance of annealed barriers under electric stress (breakdown field above 10 MV/cm) may enable all-AlOx and SiO2/AlOx layered "crested" barriers for advanced floating-gate memory applications.

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