We have investigated the influence of Sb on the carrier concentration of ZnO single crystals. ZnO single crystal substrates were doped in a sealed ampule by annealing in the Sb vapor at temperatures from 700 to 900 °C to create acceptor centers in ZnO. The dopant concentration profiles were determined by secondary ion mass spectrometry. A significant distinction in dopant concentrations as well as depth of penetration was observed for different temperatures of annealing. Electrical properties of the samples were studied by the Hall Effect and resistivity measurements. Valence states of Sb in the samples were investigated by the X-ray photoelectron spectroscopy method to prove the incorporation of the latter in the matrix of ZnO before and after oxygen annealing. The evolution of the carrier concentration of ZnO along with the valence state of Sb is explained.

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