The spectral structure of a three-dimensional X-wave pulse incident on a planar surface of discontinuity is examined. Introducing a novel superposition of azimuthally dependent pulsed plane waves, it is shown for oblique incidence that the reflected pulse has a localized wave structure. On the other hand, the transmitted field maintains its localization up to a certain distance from the interface, beyond which it starts disintegrating. An estimate of the localization range of the transmitted pulse is established; also, the parameters affecting the localization range are identified. The reflected and transmitted fields are deduced for X-waves incident from either a slower medium or a faster one. For the former case the evanescent fields in the second medium are calculated and their explicit time dependence is deduced for a normally incident X-wave. Furthermore, at near-critical incidence the transmitted pulse exhibits significant pulse compression and focusing.
A new formulation of a time domain incremental theory is introduced. This approach is applied to the scattering of a pulsed plane wave incident on a circular disk. It is shown that the scattered field is free from singularities at caustics and exhibits a notable wave structure outside Keller's cone.
The spectral structure of the reflected and transmitted fields due to a three dimensional electromagnetic X-wave incident on a planar air-dielectric interface is examined. Using a novel superposition of azimuthally dependent pulsed plane waves, it is shown that for oblique incidence the reflected pulse has a localized wave structure. On the other hand, the transmitted field maintains its localization up to a certain distance from the interface beyond which it starts disintegrating. A study of the effects of polarization on the amplitudes of the reflected and transmitted wave fields is presented.
A self-consistent time-domain travelling-wave model for the simulation of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) is developed. The 1-D time-domain travelling-wave model takes into consideration of time-varying QD optical susceptibility, refractive index variation resulting from intersubband free-carrier absorption, homogeneous and inhomogeneous broadening, and QD spontaneous emission noise source. Carrier concentration rate equations are considered simultaneously with the travelling wave model. Effects of temperature on optical susceptibility and carrier density in the active region are taken into account. The model is used to analyze the characteristics of 1.3-µm oxide-confined QD InAs-GaAs VCSEL. The field distribution resulting from time-domain travelling-wave equations, in both the active region and distributed Bragg reflectors, is obtained and used in finding the device characteristics including light-current static characteristics considering the thermal effect. Furthermore, the dynamic characteristics and modulation frequency response are obtained in terms of inhomogeneous broadening.
A study of the diffraction and scattering of a transverse electric X-wave by conducting bodies is presented based on the timedomain, uniform theory of diffraction method and the pulsed plane wave representation of an X-wave. The latter allows the calculation of the diffraction and scattering of each pulsed plane wave component of the incident X-wave at the observation point. The superposition of the individual diffracted and scattered pulsed plane wave components yields the diffracted and scattered field due to an incident X-wave. First, the scattering from a perfectly conducting infinite wedge is studied. Then, the case of a circular conducting disk is considered as an example of a finite scatterer. Numerical results illustrating the effectiveness of the approach, as well as an estimate of the limits of its applicability, are provided.
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