No abstract

The dependence of the transition time between avalanche breakdown and secon'd breakdown on the input power to a p-n junction was studied. Second breakdown was observed both in transistor configurations and in single junction structures. Fine structure in the breakdown was also observed. Specimens at temperatures of 77°K and 300'K were pulsed with a fast-rising rectangular voltage obtained by standard coaxial line techniques. The voltage across the sample and the current through it are monitored, and clearly show the effects of second breakdown. The transition time between avalanche and second break,down was easily measured. The transition time is observed to decrease with increased input power. For operation at 77"K, a longer transition time was observed than that for similar input at 300°K. The dependence of the transition time on the input power indicates a cmstant input energy for which second breakdown occurs. It is deduced that second breakdown is caused by a thermal breakdown of the depletion region. The constant energy require'd and related occurrence of melt channels in the junction region supports this deduction.The dependence of turnover characteristics IM, V M , TM and EM of N%V N+plate contact Si device upon the applied condition was 'nvestigated.The dimensions of the device were: N-layer thickness% plop, N 4 layer thickness Cy 20p, 'diameter Cy 1.0 mm*, and Pb solder-layer thickness =250-3001.(. The N layer has the resistivity of four groups, ranging from 3 to 220 ohm-cm. Applied voltage has a waveform with a linearly rising part and an adjoining and EM decrease. We designate this effect the varying characteristics. flat part. When the applied voltage is increased, IM increases, whereas TM.When the applied voltage is higher, IN[, TM , and EM saturate and reach the saturated values of IMS , TMs , and EMS . In this case the applie'd voltage has a constant value of the slope. The saturated characteristics of I n(rs , TMS , and EMS were also studied by varying the slope of the applied voltage. The significance of turnover phenomenon in the device consists in the resemblance to second breakdown (SB) in the transistor as shown in the previous report'.The report showed that SB characteristics varied considerably with the applied conditions and were characterized by the varying and saturate,d effects. This may indicate that SB is not a peculiar phenomenon to the transistor, but is also applicable to the semiconductor itself*.

Организация конференции и издание материалов осуществлены при финансовой поддержке РФФИ, проект № 18-09-20015 г УДК 902/904 ББК 63.4 С 833 Стратегии жизнеобеспечения в каменном веке, прямые и косвенные свидетельства рыболовства и собирательства. Материалы международной конференции, посвященной 50-летию В.М. Лозовского. Под редакцией О.В. Лозовской, А.А. Выборнова и Е.В. Долбуновой.-СПб.: ИИМК РАН, 2018.-266 с. Сборник содержит материалы международной конференции, приуроченной к 50-летию яркого исследователя позднего каменного века Восточной Европы В.М. Лозовского. Представленные работы объединены проблематикой изучения взаимодействия человека и окружающей среды и разным моделям адаптации в рамках первобытного хозяйства. Основное внимание уделяется роли рыбной ловли и собирательства съедобных растений, важнейших видов деятельности, однако недостаточно освещенных в археологических источниках. Материалы поздних поселений с благоприятными условиями сохранности органических материалов, а также косвенные свидетельства производства и использования рыболовных инструментов и орудий собирательства, горелые макроостатки семян и растений, данные химического состава содержимого посуды и изотопные характеристики человеческих костей, должны помочь реально оценить роль этих видов пищевых ресурсов в диете первобытного человека. Издание предназначено для археологов, палеогеографов, палеоботаников и представителей смежных дисциплин.