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Neutron transmutation doped silicon is an important material for electronics that is based on the conversion of30Si into31P through a30Si (n,γ) →31Si reaction taking place during the neutron irradiation and followed by the beta decay of31Si into31P. The production of such silicon requires high homogeneity. The paper describes a new facility for NTD of silicon ingots of up to 5 inches in diameter and presents the experimental results that were obtained at IRT-T research nuclear reactor.

The neutron transmutation doping (NTD) of silicon is usually used for producing different electronic devices like thyristors, VLSI, detectors, etc. This article focuses on the formation of the radiation field to create the technology for silicon NTD implementing a pool-type nuclear reactor. The works includes the analytical consideration of the conditions for achieving the high radial irradiation uniformity of silicon ingots.

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