For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380nm to 190nm poly-pitches.

Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH ) in p-channel MOSFETs has enabled a simplified gate-first high-κ/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafers for SOC applications has unique challenges like the oxidation rate differential with silicon, defectivity and interface state density in the unoptimized state, and concerns with T inv scalability. In overcoming these challenges, we show that we can leverage the superior mobility, low threshold voltage and NBTI of cSiGe channels in high-performance (HP) and low power (LP) HKMG CMOS logic MOSFETs with multiple oxides utilizing dual channels for nFET and pFET.Introduction:

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The properties of semi-insulating GaN films doped with Fe are reported. The 300 K sheet resistivity of the films is 2 x1010 Ω/square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at E C -0.5 eV. The concentration of the 0.5 eV traps in the Fe doped portion of the films was 3 x10 16 cm -3. Also present is a high concentration of deeper electron traps with the level near E C -0.9 eV and of hole traps with level near E V +0.9 eV. Intra-center transitions of the Fe 3+ center are observed in the photoluminescence spectra. The stability of the films were studied after rapid thermal annealing (RTA) at temperatures 750-1050 o C and furnace annealing in hydrogen at temperatures up to 850 o C. The Fe is distributed nonuniformly, with a minimum near 0.5-1 µm from the surface. RTA at 850 o C leads to roughness of the surface and decreases of the sheet resistivity and the cathodoluminescence intensity. The density of deep traps also greatly decreases. The effect becomes much more pronounced for furnace annealing in hydrogen for times on the order of 15 minutes and 850 o C is the highest practicable under these conditions without destroying the surface morphology.