Solid-state interfacial reactions between Sn and Cu(Ni) alloys have been investigated at the temperature of 125°C. The following results were obtained. Firstly, the addition of 0.1 at.% Ni to Cu decreased the total thickness of the intermetallic compound (IMC) layer to about half of that observed in the binary Cu/Sn diffusion couple; the Ni addition decreased especially the thickness of Cu 3 Sn. Secondly, the addition of 1 to 2.5 at.% Ni to Cu further decreased the thickness of Cu 3 Sn, increased that of Cu 6 Sn 5 (compared to that in the binary Cu/Sn couple) and produced significant amount of voids at the Cu/Cu 3 Sn interface. Thirdly, the addition of 5 at.% Ni to Cu increased the total thickness of the IMC layer to about two times that observed in the binary Cu/Sn diffusion couple and made the Cu 3 Sn disappear. Fourthly, in contrast to the previous case, the addition of 10 at.% Ni to Cu decreased the total IMC (Cu 6 Sn 5 ) thickness again close to that of the Cu/Sn couple. With this Ni content no voids were detected. The results are rationalized with the help of the thermodynamics of the Sn-Cu-Ni system as well as with kinetic considerations.

We report electron probe microanalysis measurements on nickel silicides, Ni5Si2, Ni2Si, Ni3Si2, and NiSi, which were done in order to investigate anomalies that affect the analysis of such materials by using the Ni L3-M4,5 line (Lα). Possible sources of systematic discrepancies between experimental data and theoretical predictions of Ni L3-M4,5 k-ratios are examined, and special attention is paid to dependence of the Ni L3-M4,5 k-ratios on mass-attenuation coefficients and partial fluorescence yields. Self-absorption X-ray spectra and empirical mass-attenuation coefficients were obtained for the considered materials from X-ray emission spectra and relative X-ray intensity measurements, respectively. It is shown that calculated k-ratios with empirical mass attenuation coefficients and modified partial fluorescence yields give better agreement with experimental data, except at very low accelerating voltages. Alternatively, satisfactory agreement is also achieved by using the Ni L3-M1 line (Lℓ) instead of the Ni L3-M4,5 line.

Experimental check of the use of unconventional reference materials for EDS analysis in a TEM by extrapolation method based on pure elements M Nacucchi, M Alvisi, D Altamura et al. Abstract. We present the results of an inter-laboratory comparison of EPMA analysis at low voltage (5 -6 kV) of three monophasic alloy steel samples. The aim of the work was to obtain an estimate of the present situation of low-voltage analysis of steel and identify needs for improvement. EPMA analyses of the samples were conducted by seven participant groups using electron microprobes and scanning electron microscopes of different kind, equipped with wavelength-and/or energy-dispersive X-ray spectrometers, and employing their own methodology of analysis. The results using WDS showed essentially an underestimation of the Cr contents, with relative deviations from the reference values ranging from -0.7 % to -17 %, and an overestimation of Fe and Ni, with relative deviations from the reference composition ranging from -4 % to +30 %, and from +14 % to +42 %, respectively. The relative deviations obtained by using EDS showed larger scatter, ranging from -16 % to +54 % for Cr, -0.4 % to +66 % for Fe and from +13 % to +90 % for Ni. Reasons for the differences observed and the scatter of results are discussed.

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The mass thickness of thin titanium oxide and hafnium oxide films grown by the atomic layer deposition method on silicon substrates was determined using EPMA data and STRATA and FLA programs. The results of the two programs coincided well if a set of relative intensities was measured at different energies of probe electrons. Comparative measurements by XRF gave higher values. Comparing the mass thicknesses of films measured by EPMA and absolute thicknesses determined by optical spectrophotometry, ellipsometry and profilometry, the densities of polycrystalline films were estimated. Values of 3.3±0.2 and 8.7±0.2 g cm−3 were obtained for TiO 2 anatase grown at 300 °C and monoclinic HfO 2 grown at 600 °C, respectively. Titanium oxide films deposited at 100 °C contained significant amounts of chlorine and hydroxyl groups (7.2±0.7 and 6.9±0.9 mass-%, respectively).had HfO 2 stripes on a silicon substrate. The film was deposited