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A new technique for the characterization of semiconductors, surface photovoltage measured capacitance (SPMC) is introduced. This technique permits the semiconductor surface space-charge capacitance to be determined by simple measurements of the intrinsic surface photovoltage (ISPV) induced by chopped light. ISPV transients for a semiconductor under depletion conditions are discussed. Both theoretical and experimental results are presented demonstrating the existence of two limiting dependences of the ISPV on the ratio Φ/f (photon flux divided by the chopping frequency of the incident light). It is shown that ISPV induced by low-intensity, high-frequency chopped light is proportional to the reciprocal of the semiconductor surface space-charge capacitance. This dependence is fundamental to the SPMC method whose capabilities are illustrated using GaAs. Using a three-electrode electrochemical cell, the doping concentration, the flat band potential and the energy of surface states which are responsible for the Fermi level pinning have been determined.

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Synthetisches einkristallines n‐leitendes WS2 (Bandlücke ca. 1.3 eV) wurde als Photoanode in wäßrigen und anderen Elektrolyten charakterisiert.