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We report investigations of the low temperature optical properties of AllnAs-lnP single heterojunctions and short period superlattices grown by atmospheric presure MOCVO. Strong luminescence is observed and allows photoluminescence excitation measurements. Bandgaps are accurately determined from luminescence excitation and optical absorption spectra, and cross-checking optical data with structural properties yields a precise value (413 meV) of the conduction band offset in this system. This value deviates significantly from the prediction of the offset transitivity rule.

A monolithic vertical cavity bistable device based on the InGaAlAs system has been grown by low pressure metalorganic vapor phase epitaxy in a single run. First observation of all-optical bistability is reported in this new monolithic structure, with a contrast of 15:1 and a threshold power of less than 300 μW. X-ray diffraction and reflectivity measurements confirmed the high crystallographic and optical qualities of the material. This result shows that the InGaAlAs system is well suited to the fabrication of vertical cavity devices in the optical communication wavelength range.