We demonstrate the capability to control the ripple periodicity on polycrystalline ZnO films by applying temporally delayed femtosecond double pulses. It is shown that there is a characteristic pulse separation time for which one can switch from low- to high- spatial-frequency ripple formation. Results are interpreted based on the relation of the characteristic delay time with the electron-phonon relaxation time of the material. Our results indicate that temporal pulse shaping can be advantageously used as a mean to control the periodic nanoripples' formation and thus the outcome of laser assisted nanofabrication process, which is desirable for the applications of nanopatterned transparent semiconductors.

The effect of ultrashort laser-induced morphological changes upon irradiation of silicon with double pulse sequences is investigated under conditions that lead to mass removal. The temporal delay between twelve double and equal-energy pulses (E p =0.24J/cm 2 each, with pulse duration t p =430fs, 800nm laser wavelength) was varied between 0 and 14ps and a decrease of the damaged area, crater depth size and periodicity of the induced subwavelength ripples (by 3-4%) was observed with increasing pulse delay. The proposed underlying mechanism is based on the combination of carrier excitation and energy thermalization and capillary wave solidification and aims to provide an alternative explanation to the control of ripple periodicity by temporal pulse tailoring. This work demonstrates the potential of pulse shaping technology to improve nano/micro processing.

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