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Better carrier confinement in 0.6-μm-band laser diodes can be achieved by incorporating an AlInP layer into the (Al0.7Ga0.3)0.5In0.5P cladding layers. The effectiveness of this heterostructure, though, cannot be analyzed without detailed knowledge of the energy band alignment at the Xc, Γc, and Γv band extrema. We conducted photoluminescence and photoreflectance measurements at 12–100 K on (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (x=0.47–0.61) free from long-range ordering, and analyzed the results to obtain basic data on the alignment scheme. In these measurements we observed the Γc to Γv and the Xc to Γv transitions in bulk Al0.53In0.47P and (Al0.7Ga0.3)0.5In0.5P alloys, the AlxIn1−xP Xc to (Al0.7Ga0.3)0.5In0.5P Γv transition in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP superlattices, and the Xc to Γv and to the Γc to Γv transitions in 20-nm-wide AlxIn1−xP layers in (AlyGa1−y)0.5In0.5P/AlxIn1−xP/(AlyGa1−y)0.5In0.5P double heterostructures (x=0.33–0.39, y=0.7–1.0). We found that the energy level of Xc in AlxIn1−xP decreased by 0.09 eV as x increased from 0.47 to 0.61, the Xc of AlxIn1−xP crossed the Γc at 0.340 (±0.008), and the Γv of AlxIn1−xP crossed the Γv of (Al0.7Ga0.3)0.5In0.5P at x=0.47(±0.01). The share of the band offset at Γc for x=0.53 was 75(±3)%.

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