Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams J. Appl. Phys. 111, 013512 (2012); 10.1063/1.3675270 Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons
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