Interference fringes on transmission topographs of crystals with an implanted amorphous layer are, among others, attributed to the moir6 or the translation-fault effect. This discussion is reconsidered in the frame of the theory of a perfect bicrystal extended to a deformed one. It is shown that translation-fault fringes have the same properties as moir6 fringes and that it is not necessary to introduce translation-fault fringes as a new diffraction phenomenon.
Moir~ fringes are observed on X-ray diffraction topographs of silicon on insulator structures produced by different SIMOX (separation by implantation of oxygen) processes. The parameters that can be extracted from a diffraction Moir6 experiment are discussed. A Moir6 experiment is sensitive to the relative strain between the two parts of a bicrystal system. The sign of the relative strain and its components perpendicular to the sample surface cannot be determined from the geometry of the Moir6 fringes. The influence of sample curvature on Moir6 fringes is considered. Different deformation models are discussed to interpret the experimental findings. It is found that a triclinic relative deformation explains the observed symmetries between Moir6 topographs from different reflections, the spacings of the Moir6 fringes and their angles to a reference direction. Both the dilational and the shear components of the relative strain tensor are found to be in the order of 10 -7 . Significant differences in relative strain are observed on SIMOX samples produced by different processes.
Large area transmission and section topographs of semi-insulating gallium arsenide wafers grown by the gradient freeze technique are made with synchrotron radiation at HASYLAB in Hamburg and at ESRF in Grenoble. Several high-resolution images including stereo pairs are obtained on the same film at a time. A typical dislocation line is an arc of a circle which starts from one surface and ends at the same surface. From the disappearance of the dislocation image and using the g · b = 0 criterion it is concluded that the Burgers vector b of the most common dislocations is parallel to 〈110〉. Rather large volumes of the wafer are dislocation-free. Section topographs of epitaxial wafers show defects and strain fields at the interface between an n-type substrate and the epitaxial layers grown by chemical vapor deposition. The results are compared with those obtained from detector performance measurements.
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