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We have investigated RIE-induced damage in MOS devices with thermal oxide as well as N2O-annealed oxide as gate dielectrics. A systematic improvement in robustness against RIEinduced damage is seen when N2O flow rate and/or N2O anneal temperature are increased. We have demonstrated a N2O anneal process at 900 C, which provides a robust SiO2/Si interface against plasma damage and hot carrier stress.

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A simple servo unit is described. The device utilizes the electromagnetic fluid clutch developed by J. Rabinow of the National Bureau of Standards. Simplicity in design and construction, relatively high torque inertia ratio obtainable, and high power transmission capabilities appear to be the chief merits of such a servo system. Performance data on a prototype servo unit are submitted.