The gamma radiation protection parameter for the TeO2-LINbO3-BaF2-La2O3 network modified by Nb2O5/TiO2 in the present work. The following compounds have been examined: [77.53TeO2-7.31LiNbO3-4.16Nb2O5-10% BaF2-1.0La2O3, sample code TSH1), [71.69TeO2-7.31LiNbO3-10BaF2-1.0La2O3, sample TSH2] and [76.69TeO2-7.31LiNbO3- 5TiO2-10BaF2-1% La2O3 and sample code TSH3]. Within this, we specify the criteria for shielding such as mass attenuation coefficients (μm/), effective atomic numbers (Zeff), electron density (Ne), half-value layers (HVL), mean free path (MFP). The TSH3 glasses have a greater gamma-ray safety performance because of a higher value of HVL, (μm/), and MFP. The observed glasses display good gamma ray safety compared to used standard radiation-shielding materials, namely RS-360, and RS-520. Finally, the structure of these glasses investigates at wavenumber in the range 50 to 1200 cm-1 by using Raman spectra.

Sheet resistance, Rs , measurements for the (Se65-xAs35Sbx thin films with (0 ≤ x ≥ 10) at. %) with thickness film 1000 nm and heating rate, 5 K/min has been explained in this work. Measurements of the sheet resistance used to compute the thermal and electrical parameters in the temperature range from 300 to 665 K. In the sheet resistance curves, two main regions have been considered clearly evidence of one crystallization region for the studied films. The activation energy, Ec , of crystallization and Avrami index, n, were estimated. The change of activation energy with volume of crystalline fraction has been deduced. The electrical results of the studied films appear two types of conduction channels which contribute two conduction mechanisms in crystallized region. The activation energies ΔE, two pre-exponential factors 0  , *  0 and other parameters has been computed in both of the extended and hopping states regions. The crystalline phases for the as-deposited and annealed films were identified using by x-ray diffraction (XRD).

In the present work, polycrystalline materials of CdSe1-xTex with (x = 0, 0.2, 0.4, 0.6, 0.8 and 1 at. %) were prepared by a conventional solid-state reaction method. Thin films of CdSe1-xTex of about 0.5 µm have been produced using evaporation method. The prepared thin films were characterized by using EDAX and X-ray diffractometer. The Xray diffraction studies shows that the films are polycrystalline in nature, and well oriented along a preferred direction of (002) for hexagonal and along (111) for cubic crystal structure. Both of optical constants (n, k) and film thickness have been determined precisely in terms of envelop method. Analysis of the optical absorption data showed that the transition mechanism takes place by a direct transition. The band gap decreases from 1.677 eV (CdSe) with an increase in Te concentration passing through a minimum of 1.412 eV for CdSe0.4Te0.6 (x = 0.6) and then for higher Te concentration band gap increases to 1.486 eV corresponds to pure CdTe. The importance of CdSe1-xTex compound is the tunability of band gap when incorporating Te into the CdSe. The dispersion of the refractive index is described using the Wimple–DiDomenico (WDD) single oscillator model. The non-linear refractive index has been discussed.

Polycrystalline ZnSe thin films with thickness 720 nm were prepared by thermal evaporation under ultra vacuum onto glass substrates. The optical properties of the as deposited and UV-irradiated films with different exposure times (0, 30, 60, 90, and 120 min.) were reported. The polycrystalline nature of the films was detected by XRD measurements. XRD patterns for UV irradiated films show that the intensities of the peaks increase with increasing the UV-irradiated time but the full width at half maximum (FWHM) decreases. The optical constants of the films were calculated by Swanepoel's method in terms of wedge shape model to obtain both thickness and refractive index with high precision. The energy gap of ZnSe films was determined by using the transmission in terms of transmission spectra in the strong absorption region. In terms of the obtained results, the increase of exposure time improved shrinkage of non-uniform transmission in both the strong and medium absorption region of ZnSe film. The optimal improvement was at UV-irradiation time equal 120 min. Accordingly, the possibility of asserting that such tenability in the optical refractive index and energy gap of ZnSe thin films with UVirradiation serves as a promising film in optoelectronic devices.