The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

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We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms.

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