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Using first principles calculations based on density functional theory (DFT), the electronic properties of SnO 2 bulk and thin films are studied. The electronic band structures and total energy over a range of SnO 2-multilayer have been studied using DFT within the local density approximation (LDA). We show that changing the interatomic distances and relative positions of atoms could modify the band-gap energy of SnO 2 semiconductors. Electronic-structure calculations show that band-gap engineering is a powerful technique for the design of new promising candidates with a direct band-gap. Our results present an important advance toward controlling the band structure and optoelectronic properties of few-layer SnO 2 via strain engineering, with important implications for practical device applications.

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