Initial stages of SiC crystal growth by Physical Vapor Transport method were investigated. The following features were observed: (a) many nucleation crystallization centres appeared on the seed surface during the initial stage of the growth, (b) at the same places many separate flat faces generated on the crystallization front, (c) the number of facets was dependent on the shape of the crystallization front and decreased during growth, (d) appearance of many facets lead to decrease of structural quality of crystals due to degradation of regions where crystallization steps from independent centres met. The results revealed that the optimal crystallization front should be slightly convex, which permits the growth of crystals with single nucleation centre and evolution of single facet on the crystallization front. The subjects of study were the shape and the morphology of growth interface. Defects in the crystallization fronts and wafers cut from the crystals were studied by optical microscopy, atomic force microscopy (AFM) combined with KOH etching and X-ray diffraction.

Cytocompatibility and hemocompatibility are essential features for tissue- and blood-contacting implants such as artificial heart valves, vascular grafts and stents. Platelet activation as the main trigger of thrombosis results in implant failures. The purpose of this study results from the demands on anti-coagulant and non-corrosive innovative biomaterials for cardiovascular implants. Therefore, hemocompatibility and cytocompatibility of various high-strength ceramics, such as alumina, zirconia, silicon nitride and silicon carbide, were examined to identify the most appropriate ceramic for cardiovascular implants. In addition to the material species, different crystallographic structures (single- and poly-crystalline) and surface terminations (Si and C faces) of silicon carbide were used in order to reveal the interactions between blood and material surface. Three cell types, i.e. human umbilical vein endothelial cells, mesenchymal stem cells and blood cells, were cultured on the substrates and their interactions with material surfaces were analyzed. Cytotoxicity of the materials was tested by live/dead staining. Hemocompatibility in terms of platelet and white blood cell activation was examined via scanning electron microscopy and indirect ELISA. To mimic physiological conditions in vitro, the hemocompatibility of the materials was additionally analyzed in a bioreactor under dynamic flow conditions in comparison to static incubation. All ceramics were found to be cytocompatible for mesenchymal stem cells, human umbilical vein endothelial cells and blood cells. The highest number of resting, non-activated platelets was observed on the monocrystalline silicon carbide demonstrating that this material triggers the platelet activation less compared to the other materials. It is found to be the most appropriate ceramic for blood-contacting implants in terms of cell adhesion, cell viability, and hemocompatibility.

Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and properties were analyzed using X-ray diffraction, SEM, and Hall measurements. The samples in the form of a beam were also prepared and strained (bent) to measure the resistance change (Gauge Factor). Based on the results obtained for bulk materials, piezoresistive thin films on 6H-SiC and 4H-SiC substrate were fabricated by Chemical Vapor Deposition (CVD). Such materials were shaped by Focus Ion Beam (FIB) into pressure sensors with a specific geometry. The characteristics of the sensors made from different materials under a range of pressures and temperatures were obtained and are presented herewith.

In this paper we report on the crystal growth and magnetic as well as structural studies of SiC : Fe. SiC crystals were grown by Physical Vapor Transport method. We used Fe enriched source material to dope crystals. The magnetic properties were examined by AC/DC magnetometry. AC magnetic susceptibility as well as DC magnetization measurements revealed ferromagnetic type of magnetic ordering. The structural measurements using powder X-ray diffraction were performed.

Silicon carbide crystals were grown from the vapor. Improvement of the quality of the central part of the crystal was achieved by optimization of the geometry of the source material. Active thermal interaction of the source material and the crystallization front made possible an effective programming of the shape and morphology of the crystal. Termination of micropipes on microfacets formed on the crystallization front during growth was observed.