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Further development of microelectronics requires novel or improved technological approaches for device nanofabrication and functional properties characterization. In this paper, we studied the crystal structure and magnetic properties of epitaxial Co nanostrips with the average width of 32.6, 45.3, and 62.6 nm grown on a step-bunched Si(111)5.55 × 5.55-Cu/Cu surface. Technological conditions, under which the ultra-high aspect ratio (∼10) structurally solid, straight nanostrips of hcp-Co with crystallographic axis [0001] oriented along their long side can be grown, were determined. The dependence of the coercive force on the width of the nanostrips was demonstrated. Magnetization reversal through the transverse domain-wall nucleation and propagation in a Co nanostrip was defined with an analytical approach based on the Stoner-Wohlfarth model. Using the first-order reversal curve method, we analyzed the effect of nanostrip uniformity degree on magnetic behavior and the influence of the magnetostatic interactions on the coercive force of individual nanostrips.