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The vision of achieving a completely in-vacuum process for fabricating HgCdTe detector arrays is contingent on the availability of a vacuumcompatible photolithography technology. One such technology for vacuum photolithography involves the use of amorphous-hydrogenated Si (a-Si:H) as a photoresist. In this work, we deposit a-Si:H resists via plasma-enhanced chemical-vapor deposition (PECVD) using an Ar-diluted silane precursor. The resists are then patterned via excimer laser exposure and development etched in a hydrogen plasma where etch selectivities between unexposed and exposed regions exceed 600:1. To determine the best conditions for the technique, we investigate the effects of different exposure environments and carry out an analysis of the a-Si:H surfaces before and after development etching. Analysis via transmission electron microscopy (TEM) reveals that the excimer-exposed surfaces are polycrystalline in nature, indicating that the mechanism for pattern generation in this study is based on melting and crystallization. To demonstrate pattern transfer, underlying CdTe films were etched (after development of the resist) in an electron cyclotron resonance (ECR) plasma, where etch selectivities of approximately 8:1 have been achieved. The significance of this work is the demonstration of laser-induced poly-Si as an etching mask for vacuum-compatible photolithography.

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