No abstract

Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson's equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the "ideal" diode with average ideality factor n1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.

No abstract