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A method of sample surface topography reconstruction is described based on the asymmetry in the X-ray yields acquired by a pair of X-ray detectors positioned at opposite sides of the probing beam. The yield asymmetries in the two simultaneously acquired elemental maps are caused by differences in the X-ray absorption along the X-ray exit route in the sample with a topographically structured surface. The approach presented introduces an asymmetry factor of the X-ray intensity in each of the image pixels to obtain an image asymmetry matrix. The dependence of the asymmetry factor on the local target inclination in the detector plane is calculated for a flat sample surface model. The image asymmetry matrix is then converted into the local inclination angle matrix. As the last step, the surface topography is then reconstructed from the local inclination angle. The method is based on X-ray absorption phenomena and could be applied equivalently in X-ray elemental mapping methods using excitation beams with a well-defined direction in the sample. This includes micro-X-Ray Fluorescence analysis (micro-XRF) and micro-Proton Induced X-ray Emission (micro-PIXE). We demonstrated the method by topographic analysis of engraved metallic samples with stereo-PIXE and compared it with the results of stylus profilometry. The smallest value of the X-ray production depth and the characteristic X-ray attenuation length determines the lateral resolution of the proposed topography reconstruction method.

In this work, Aluminum doped Zinc oxide thin films were sputtered on glass substrate by the direct current (DC) magnetron sputtering method. The influence of Ar gas pressure on the structural and optical properties was measured. The optical parameters were calculated by UV-Visible spectroscopy, the nature of transition reveals direct allowed transition for the prepared films. Also, some physical quantities such as the strength of electron-phonon interaction, dissipation factor (tan) in the visible region and the lattice dielectric constant were presented for these thin films. The AFM analysis extracts surface parameters of the AZO thin films that help us to investigate the surface analysis with numerical data. The band gap energy and transition index without any presumption about transition natural were calculated from Derivation Ineffective Thickness Method (DITM) and the reaction of Ar gas pressure plays an essential part in controlling the physical quantities of AZO thin films.

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