This work presents an analysis of the influence of the intrinsic length region (Li) and the thickness of the silicon film (tSi) on the performance of lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the blue and ultraviolet (UV) range. The experimental measurements performed with the wavelengths of 396 nm, 413 nm, and 460 nm in a temperature range of 100 K to 400 K showed that the optical responsivity of the SOI PIN photodetectors has larger dependence on the incident wavelength than on temperatures variation. Two-dimensional numerical simulations showed the same trends as the experimental results as a function of temperature and as a function of wavelength. Numerical simulations were used to investigate the responsivity and total quantum efficiency of PIN SOI photodetectors with intrinsic length region ranging from 5 µm to 30 µm and silicon film thickness ranging between 40 nm to 500 nm. From the results can be concluded that by properly choosing Li and tSi it is possible to optimize PIN SOI photodiodes performance for detecting specific wavelengths.

This work presents an analysis of the main performance characteristics of lateral PIN photodiodes implemented in thin layer SOI technology, when illuminated by wavelengths, in the range between blue and ultraviolet (UV), and subjected to temperature variations. Twodimensional numerical simulations were performed to analyze characteristics such as photocurrent, absorption, quantum efficiency, and responsivity. In this analysis, the influence of the variation between 40 nm and 500 nm of the silicon film thickness (tSi) and the intrinsic length region (Li) between 5 and 30 ?m was considered to evaluate the performance of the photodiode at different wavelengths, in the range blue and ultraviolet (UV). Different sets of physical models were studied in the simulations, to reproduce trends reported in the literature. Through experimental measurements of the intensities of incident powers as a function of distance, light sources were characterized using light-emitting diodes at wavelengths, UV (390 nm), violet (410 nm), and Blue (460 nm), adapted for providing light energy in the photosensitive region of experimental photodiodes also characterized for temperatures between 100 K and 400 K. The simulations show that there is a dependency relationship between the silicon film thickness and the intrinsic length region (Li), that when evaluated and scaled simultaneously it is possible to optimize the quantum efficiency and responsivity of the PIN SOI photodiodes in the definition technology for specific wavelength applications. The results show that the quantum efficiency around 28 % and responsiveness around 85 mA / W for a given technology showed the same trend as the experimental results, taking into account the wavelength and temperature range. The results also show an almost linear trend in the relationship between silicon film thickness (tSi) and absorption (light penetration depth), so that, in thinner silicon film thickness, the device will be more selective for low wavelengths, that is, closer to UV