We report on the properties of gallium oxide (Ga2O3) thin films deposited on c-plane sapphire substrates using radio frequency magnetron sputtering under various conditions. The parameters varied included the composition of the deposition gas, the substrate temperature, and postdeposition annealing temperature. The optical characteristics obtained by UV-VIS spectroscopy showed excellent transparency of 90%–95% for all the films obtained. The structural and compositional properties of the films were determined using x-ray diffraction and energy dispersive spectrometry measurements. The films deposited in Ar at 400 °C showed diffraction peaks at 18.6°, 37.2°, and 58.2°, which are attributed to diffraction peaks from (2¯01), (4¯02), and (6¯03) planes of β-Ga2O3. Postdeposition annealing in N2 at 400–900 °C did not make any improvement in the crystalline quality of the films. The addition of tin in the films produced transparent films whose optical bandgaps decreased with increasing tin concentration in the films.

No abstract

Nanoribbons of organic semiconductor salts, poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS), were deposited on silicon dioxide (SiO2) by the electrospinning technique. It is possible to "shave" or mechanically displace small regions of the polymer nanoribbon by using atomic force microscopy (AFM) nanolithography techniques such as nanoshaving, leaving swaths of the surface cut to the depth of thickness of the nanoribbon. By placing the nanoribbon between two electrode pads with a 10 μm gap, for the first time was performed nanoshaving on the nanoribbon by removing portions of PEDOT-PSS and simultaneously in-situ transport measurement properties of the nanoribbon's dependence on the remaining cross section, showed evidence of anisotropic nature of the conductivity of PEDOT-PSS nanoribbons.