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The deposition parameter space has been extensively explored using the hot wire technique with 1% SiH4 in He as a source gas. To achieve reasonable deposition rates despite the high dilution, the filament was positioned at 1–2 cm from the substrate. This short distance introduced a large nonuniformity across the substrate in deposition rate as well as in film properties. These spatial variations were used to analyze which factors in the deposition determine film quality. Radiation from the filament as well as deposition rate cannot explain the large variation in film properties, leaving gas-phase reactions of Si and H from the hot filament as the primary cause. It is clear that radicals evaporated from the filament must undergo gas-phase reactions with SiH4 before deposition in order to produce high-quality material. Thus, conditions such as increasing the chamber pressure or going to a heavier carrier gas increase the fraction of radicals that can react before reaching the substrate and, therefore, improve the film quality. However, such conditions also enhance multiple radical reactions before such radicals reach the substrate and this can have a negative effect on film quality: this is attributed to gas-phase nucleation with incorporation of conglomerates. The gas-phase chemistry is quite different from that of plasma-enhanced decomposition in that no disilane or trisilane is formed in significant quantities. This, and the dependence on pressure, indicates that the pathway for formation of these heavier particles is radical–radical reactions.

Device quality a-Si:H has been deposited at 3 Å/s using the “hot wire” technique with 1% SiH4 in He as a source gas. To achieve this deposition rate despite the high dilution, the filament was positioned at 1–2 cm from the substrate. This short distance introduces a large non-uniformity across the substrate in the deposition rate as well as in the film properties. This experimental fact was used to analyze which factors in the deposition determine film quality. We find that radiation from the filament is not an important factor. Data taken from samples deposited at various distances, pressures and flows suggest that the film quality is influenced by radical reactions with SiH4. However, this assumption alone predicts too strong a pressure dependence. The influence of deposition rate as an additional factor can explain the results.

A human-in-the-loop experiment was performed at the NASA Langley Research Center to study the feasibility of DAG-TM autonomous aircraft operations in highly constrained airspace. The airspace was constrained by a pair of special-use airspace (SUA) regions on either side of the pilot's planned route. Traffic flow management (TFM) constraints were imposed as a required time of arrival and crossing altitude at an en route fix. Key guidelines from the RTCA Airborne Conflict Management (ACM) concept were applied to autonomous aircraft operations for this experiment. These concepts included the RTCA ACM definitions of distinct conflict detection and collision avoidance zones, and the use of a graded system of conflict alerts for the flight crew.Three studies were conducted in the course of the experiment. The first study investigated the effect of hazard proximity upon pilot ability to meet constraints and solve conflict situations. The second study investigated pilot use of the airborne tools when faced with an unexpected loss of separation (LOS). The third study explored pilot interactions in an over-constrained conflict situation, with and without priority rules dictating who should move first.Detailed results from these studies were presented at the 5 th USA/Europe Air Traffic Management R&D Seminar (ATM2003). This overview paper focuses on the integration of the RTCA ACM concept into autonomous aircraft operations in highly constrained situations, and provides an overview of the results presented at the ATM2003 seminar. These results, together with previously reported studies, continue to support the feasibility of autonomous aircraft operations.

We present the results of H effusion studies on device-quality glow discharge deposited hydrogenated amorphous silicon (a-Si:H) films. We measure the decrease in the amount of Si-H infrared absorption as pieces of an a-Si:H sample are annealed isothermally at temperatures from 425°C to 500°C, until more than 95% of the initial H is evolved. We use the rate equation for loss of H due to annealing to calculate the activation energy for H effusion. For anneals below 500°C we observe two distinct rate processes, a fast process corresponding to release of ∼ 70% of the total H (∼10 at. %) contained in the sample, and a slower process corresponding to effusion of the remainder. The fast loss process yields an activation energy of ∼1.4 eV; this is the energy level widely observed in diffusion coefficient measurements. A similar analysis for the slow loss process yields an activation energy of ∼2.1 eV and a diffusion constant prefactor higher than that for the fast loss process. We suggest that this slow component represents the first determination of the energy depth of the “isolated” H component commonly observed in nuclear magnetic resonance experiments.