In this paper, we present a teaching methodology based on a low‐cost embedded system platform that is easy to use and replicate, oriented to real‐time simulation project development. Designed for real‐time implementation of coding generated with MPLAB Device Blocks for Simulink. The purpose of this methodology is that students, teachers, and professionals will be able to carry out a theoretical project of a simulation in a computer, which includes complex mathematical modeling, to interact with its environment in real‐time. This system has been utilized already by students of Engineering of the first semesters as well as professors and researchers in updated and initialization courses in embedded systems within the University of Guadalajara. Finally, in the results section, we show a comparison of the proposed platform and a dSPACE platform applied in a control problem with an intricate mathematical model to process through a Hardware‐in‐the‐loop (HIL).

The S-box is a basic important component in symmetric key encryption, used in block ciphers to confuse or hide the relationship between the plaintext and the ciphertext. In this paper a way to develop the transformation of an input of the S-box specified in AES encryption system through an artificial neural network and the multiplicative inverse in Galois Field is presented. With this implementation more security is achieved since the values of the S-box remain hidden and the inverse table serves as a distractor since it would appear to be the complete S-box. This is implemented on MATLAB and HSPICE using a network of perceptron neurons with a hidden layer and null error.

Purpose This study aims to present a mathematical method based on Poisson’s equation to calculate the voltage and volume charge density formed in the substrate under the floating gate area of a multiple-input floating-gate metal-oxide semiconductor metal-oxide semiconductor (MOS) transistor. Design/methodology/approach Based on this method, the authors calculate electric fields and electric potentials from the charges generated when voltages are applied to the control gates (CG). This technique allows us to consider cases when the floating gate has any trapped charge generated during the manufacturing process. Moreover, the authors introduce a mathematical function to describe the potential behavior through the substrate. From the resultant electric field, the authors compute the volume charge density at different depths. Findings The authors generate some three-dimensional graphics to show the volume charge density behavior, which allows us to predict regions in which the volume charge density tends to increase. This will be determined by the voltages on terminals, which reveal the relationship between CG and volume charge density and will allow us to analyze some superior-order phenomena. Originality/value The procedure presented here and based on coordinates has not been reported before, and it is an aid to generate a model of the device and to build simulation tools in an analog design environment.

No abstract

En este artículo se presentan las consideraciones que hay que adoptar para el uso del transistor de compuerta flotante de múltiples entradas para el diseño de circuitos integrados analógicos. Para ello se presentan las principales características de este transistor así como sus principales ventajas con respecto al transistor MOSFET convencional que este dispositivo ofrece. También, se exponen los principales problemas que han frenado el uso de este dispositivo en el ámbito comercial debido a la falta de modelos precisos.