Preparing structures with the sol-gel method often requires control of the basal plane of crystallites, crystallite structures, or the appearance of the voids. One of the critical factors in the formation of a layer are additives, such as aminoalcohols, which increase the control of the sol formation reaction. Since aminoalcohols differ in boiling points and alkalinity, their selection may play a significant role in the dynamics of structure formation. The main aim of this work is to examine the properties of ZnO layers grown using different aminoalcohols at different concentration rates. The layers were grown on various substrates, which would provide additional information on the behavior of the layers on a specific substrate, and the mixture was annealed at a relatively low temperature (400 °C). The research was conducted using monoethanolamine (MEA) and diethanolamine (DEA). The aminoalcohols were added to the solutions in equal concentrations. The microscopic image of the structure and the size of the crystallites were determined using micrographs. X-ray diffractometry and Raman spectroscopy were used for structural studies, phase analysis and to establish the purity of the obtained films. UV-vis absorption and photoluminescence were used to evaluate structural defects. This paper shows the influence of the stabilizer on the morphology of samples and the influence of the morphology and structure on the optical properties. The above comparison may allow the preparation of ZnO samples for specific applications.

In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM.