The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

An apparatus to measure the coefficient of kinetic friction (mu k) between the shoe sole and the underfoot surface was constructed, and a method including criteria to evaluate the risk of slipping during walking was developed. The apparatus is a prototype stationary step simulator capable of simulating the movements of a human foot and the forces applied to the underfoot surface during an actual slip, and the drainage capability of the contact surface between the shoe sole and the flooring when different lubricants or contaminants are used. The apparatus consists of a movable artificial foot controlled by a computer with the aid of three hydraulic cylinders. The frictional force (F mu), the normal force (FN) and their ratio (mu k = F mu/FN) are measured with a two-way force platform when the foot slides along its surface. Two separate gait patterns, heel-side (mu k 1) and sole-slide (mu k 2) gait pattern, are used for the evaluations. The method classifies studied shoe, lubricant and underfoot surface combinations into five slip resistance classes according to the measured mu k 1. The slip resistance assessments are specified with some complementary safety criteria, e.g., the ratio mu k 1/mu k 2. The reliability of the developed measurement method was assessed in an international comparison test. According to available results discussed in this paper, our method seems to be valid and the slip resistance measurements seem to be repeatable.

MBE-grown Sn-and Mg-doped epitaxial In 2 O 3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In 2 O 3 , however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.

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