Thin Si film on a SiO2 membrane has been recrystallized by single-shot excimer laser. Since there is no substrate acting as a heat sink to the latent heat in the molten Si film, the heat flow can be reduced immensely and also controlled well to form a temperature gradient along the membrane, resulting in the lateral growth of large grains, more than 70 µ m in length and a few µ m in width. Two thin film transistors (TFTs) with the channels parallel and perpendicular to the grain boundary, were fabricated using the laterally grown poly-Si film. The parallel TFT showed the maximum field-effect mobilities of more than 600 cm2/Vs for electrons and about 300 cm2/Vs for holes.

Sub-atomic layer growth of SiC has been achieved using diethylsilane ((C2H5)2SiH2) by resolving elemental kinetics of its chemical vapor deposition. The growth rate of 0.1 monolayer/cycle was obtained over the temperature range between 590°C and 675°C. The detailed growth characteristics, the composition of the grown film, and the surface morphology have been presented. The initial growth and the coverage of the grown film were also investigated by X-ray photoelectron spectroscopy.

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