Macroelectronic components combining different classes of devices often suffer from the high complexity and costs of the manufacturing processes. The printing of an active‐matrix sensor network using only five functional inks is demonstrated. The result is an all‐printed monolithically integrated touchless input interface, including ferroelectric sensor pixels, organic transistors for impedance matching, and an electrochromic display.
A compact, integrated photoluminescence based oxygen and pH sensor, utilizing an organic light emitting device (OLED) as the light source and an organic photodiode (OPD) as the detection unit, is described. The main challenge in such an integrated sensor is the suppression of the excitation light at the detector, which is typically by many orders of magnitude higher in intensity than the emitted fluorescence. In our approach, we refrain from utilizing edge filters which require narrow band excitation sources and dyes with an adequate large Stokes shift. We rather developed an integrated sensor concept relying on two polarizers to separate the emission and excitation light. One polarizer is located right after the OLED, while the other one, oriented at 90° to the first, is placed in front of the OPD. The main advantage of this solution is that any combination of excitation and emission light is acceptable, even if the two signals overlap spectrally. This is especially important for the use of OLEDs as the excitation sources, as these devices typically exhibit a broad spectral emission.
This study shows that the morphology of organic/metal interfaces strongly depends on process parameters and the involved materials. The interface between organic n-type blocking layer materials and the top Ag cathode within an organic photodiode was investigated. Ag was deposited on either amorphous tris-8-hydroxyquinolinato-aluminum (Alq(3)) or crystalline 4,7-diphenyl-1,10-phenanthroline (Bphen) using different deposition techniques such as electron beam deposition, ion beam sputtering, and vacuum thermal evaporation at various deposition rates. The interfaces were studied by transmission electron microscopy and X-ray reflectivity. It was found that Bphen does not show any Ag diffusion no matter which deposition technique was used, whereas the Ag diffusion into Alq(3) depends on the deposition technique and the deposition rate. The highest amount of Ag diffusion into Alq(3) occurred by using thermal vacuum deposition at low deposition rates.
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