In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray florescence (XRF), X-ray diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (Ta). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-polycrystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to β-single crystalline morestable structure at different annealing temperatures.

Magnesium Phthalocyanine (MgPc) was deposited on a glass substrate by pulsed laser deposition (PLD) using Q-Switching Nd: YAG laser with wavelength 1064(nm), (6Hz) Repetition rate, in addition to different laser energies (200,300,400 and 500 mJ) at room temperature under vacuum condition with (10-3torr). All films were annealed at (298K) for 1hour to attain crystallinity. X-ray diffraction of MgPc powder indicated the fact that MgPc crystallizes in polycrystalline with a monoclinic structure While comparing the MgPc of films, it’s found the intensity of characteristic peak is high as the number and energy of laser pulses increase and the crystallize is monoclinic form is observed in β-form. Miller indices, hkl, values for every one of the diffraction peaks in the spectrum of the XRD have been computed. The characteristic peak of Phthalocyanine (MgPc) is found at 2θ value 6.9137o with the hkl value of {100} for both MgPc powder and deposited thin film. The surface morphology of the films showed more uniform sized grains. EDX and FESEM analysis has shown that there has been an enhancement in the crystallinity and surface morphology as a result of the increase of laser energies and for finding the optimum parameters for which film provides more efficient structural characteristics.

Structural and optical properties of CdO and CdO0.99Cu0.01 thinfilms were prepared in this work. Cadmium Oxide (CdO) andCdO0.99Cu0.01semiconducting films are deposited on glass substratesby using pulsed laser deposition method (PLD) using SHG with QswitchedNd:YAG pulsed laser operation at 1064nm in 6x10-2 mbarvacuum condition and frequency 6 Hz. CdO and CdO0.99Cu0.01 thinfilms annealed at 550 C̊ for 12 min. The crystalline structure wasstudied by X-ray diffraction (XRD) method and atomic forcemicroscope (AFM). It shows that the films are polycrystalline.Optical properties of thin films were analyzed. The direct band gapenergy of CdO and CdO0.99Cu0.01 thin films were determined from(αhυ)1/2 vs. photon energy curve and found to be 2.3 eV for CdO thinfilm, comparing with that the CdO0.99Cu0.01film which found to be2.2eV. The electrical measurements shows that the conductivity andmobility of the charge carriers increase when Cu doped CdO.

Iron–phthalocyanine (FePc) organic photoconductive detector was fabricated using pulsed laser deposition (PLD) technique to work in ultraviolet (UV) and visible regions. The organic semiconductor material (iron phthalocyanine) was deposited on n-type silicon wafer (Si) substrates at different thicknesses (100, 200 and 300) nm. FePc organic photoconductive detector has been improved by two methods: the first is to manufacture the detector on PSi substrates, and the second is by coating the detector with polyamide–nylon polymer to enhance the photoconductivity of the FePc detector. The current–voltage (I–V) characteristics, responsivity, photocurrent gain, response time and the quantum efficiency of the fabricated photoconductive detector were measured. The performance of the fabricated detector was taken under dark and illumination using two types of light sources: UV LED with wavelength (365[Formula: see text]nm), power of (10[Formula: see text]W) and Tungsten lamp with wavelength range between (500–800) nm and the optical power of (250[Formula: see text]W). The photoresponse enhancement was improved by coating the FePc films with 200[Formula: see text]nm of polyamide nylon polymer. This type of coating, which can be considered as a surface treatment, highly increased the photoresponse of the fabricated FePc UV detector. The results show that the responsivity increased four orders of magnitudes more than the responsivity of the uncoated FePc film. The effects of the coated polymers on the responsivity and the response time of the detector were investigated.

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