Apatite-type lanthanum silicates of general formula La9.33+2x/3(SiO4)6O2+x have appeared recently as a new promising class of oxide ion conductors with potential applications as electrolytes for solid oxide fuel cells (SOFCs). They have been shown to demonstrate relatively high oxide ion conductivity at moderate temperatures as well as at low oxygen partial pressures. In this paper, the diffusion pathways and the conduction mechanism of oxide ions in these phases are reinvestigated. This is done by means of atomic scale computer modeling techniques with both semiempirical and bond valence methods. Our results support that oxide ion conduction along the c-axis proceeds by an interstitial mechanism. They also support the presence of interstitial sites located within the conduction channel. However, contrarily to recent research, it is shown that the channel oxide ions are involved in the conduction process by a push−pull type mechanism. This mechanism brings into play a cooperative movement of both two adjacent interstitial oxide ions forming a complex defect and the channel oxide ions. This complex defect is shown to move along the c-axis via a nonlinear pathway different from the conduction path proposed in literature to date. The calculated migration energy of this mechanism is found to be equal to 0.32 eV, which compares well with activation energy measured along the c-axis for Nd9.33(SiO4)6O2 single crystals.

We have successfully synthesized the highly c-axis-oriented polycrystals of apatite-type lanthanum silicate by the reactive diffusion technique. When the La 2 SiO 5 /La 2 Si 2 O 7 diffusion couples were isothermally heated at 1773−1873 K for 5−100 h, the apatite polycrystals were readily produced in the form of a layer at the interfacial boundaries. The annealed couples were characterized using optical microscopy, micro-Raman spectroscopy, X-ray diffractometry, and electron probe microanalysis. The product layers were composed of the highly c-axis-oriented prismatic crystallites, with their elongation directions being almost parallel to the diffusion direction. The formation of the apatite layer was controlled by volume diffusion, the overall reaction of which is described by (10 + 6x)La 2 SiO 5 + (4−3x)La 2 Si 2 O 7 → 3La 9.33+2x (SiO 4 ) 6 O 2+3x (0.01 ≤ x ≤ 0.13). The apatite layer formed at 1873 K was characterized by the steady decrease of the x-value along the diffusion direction from 0.13 at the La 2 SiO 5 /apatite interface to 0.01 at the apatite/La 2 Si 2 O 7 interface. We have also prepared sandwich-type La 2 Si 2 O 7 /La 2 SiO 5 /La 2 Si 2 O 7 diffusion couples and heated them at 1873 K for 100 h. The annealed couple was mechanically processed, and the thin-plate electrolyte consisting of the highly c-axis-oriented polycrystal was obtained. The oxide-ion conductivity was determined from the impedance spectroscopy data at 573−973 K, which steadily increased from 2.4 × 10 −3 S/cm to 2.39 × 10 −2 S/cm with increasing temperature. The empirical activation energy of conduction was 0.35 eV, which compares well with the calculated migration energy of 0.32 eV in a previous study.