To get high performance light emitting devices on Si platform with emission wavelength at 1.55 μm is a challenge for future Si-based opto-electronic integration chips. In this paper, we fabricated near-infrared light-emitting devices based on Er/SnO2 co-doped silica thin films. The introduction of SnO2 nanocrystals with controllable size and density not only contributes to the near-infrared light emission enhancement of Er3+ ions at 1.55 μm, but also provides an effective carrier transport channelto realize efficient and stable electro-luminescence. The corresponding devices exhibit an external quantum efficiency of 5.4% at near infrared light region and the power efficiency is about 1.52 ×10-3. Our present work lays a solid foundation for facilitating Si-based light source towards practical application in the field of optoelectronic interconnection.

SiO2-SnO2:Er3+ thin films co-doped with Yb3+ ions have been prepared by the sol-gel method. By controlling the Yb3+ concentration, the enhanced Er3+-related near infrared (NIR) emission is achieved under 325 nm excitation. The energy transfer efficiency (ETE) from SnO2 to rare earth is investigated by photoluminescence decay curves. It is found that with the increase of Yb3+ ion concentration to 15 mol%, the ETE gradually increases to ∼68.7%. The comprehensive spectroscopic analysis results demonstrate that both improved ETE and a new energy transfer channel from SnO2 nanocrystals to Er3+ ions via the Yb3+ intermediate state contribute to the Er3+-related NIR emission enhancement.

Alkaline earth metal ions (Mg2+, Ca2+, Sr2+) have been introduced into Er3+: SnO2 nanocrystals co-doped silica thin films fabricated by sol-gel method combining with the spin-coating technique. It is found...