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The information content of a contour map is calculated and compared with the information required for determining the relative position of the contours. We have found that usually the information required for arranging the contours in the right order is small as compared with that of producing the map. To demonstrate this finding we introduce two novel methods for ordering the contours. The first makes use of two colors, double exposure, moire mapping. The second analyzes the relative motion of hills and valleys, while the relative angle of two transparencies photographed in the grid projection technique is changed.

Critical Dimension Uniformity (CDU) is one of the key parameters necessary to assure good performance and reliable functionality of any integrated circuit (IC). The extension of 193nm based lithography usage combined with design rule shrinkage makes process control, in particular the wafer level CDU control, an extremely important and challenging task in IC manufacturing.In this study the WLCD-CDC closed loop solution offered by Carl Zeiss SMS was examined. This solution aims to improve the wafer level intra-field CDU without the need to run wafer prints and extensive wafer CD metrology. It combines two stand-alone tools: The WLCD tool which measures CD based on aerial imaging technology while applying the exact scanner-used illumination conditions to the photomask and the CDC tool which utilizes an ultra-short femto-second laser to write intra-volume shading elements (Shade-In Elements™) inside the photomask bulk material. The CDC process changes the dose going through the photomask down to the wafer, hence the wafer level intra-field CDU improves.The objective of this study was to evaluate how CDC process is affecting the CD for different type of features and pattern density which are typical for logic and system on chip (SOC) devices. The main findings show that the linearity and proximity behavior is maintained by the CDC process and CDU and CDC Ratio (CDCR) show a linear behavior for the different feature types. Finally, it was demonstrated that the CDU errors of the targeted (critical) feature have been effectively eliminated. In addition, the CDU of all other features have been significantly improved as well.

For the next years optical lithography stays at 193nm with a numerical aperture of 1.35. Mask design becomes more complex, mask and lithography specification tighten and process control becomes more important than ever. Accurate process control is a key factor to success to maintain a high yield in chip production.One of the key parameters necessary to assure a good and reliable functionality of any integrated circuit is the Critical Dimension Uniformity (CDU). There are different contributors which impact the total wafer CDU: mask CD uniformity, scanner repeatability, resist process, lens fingerprint, wafer topography etc.In this work we focus on improvement of intra-field CDU at wafer level by improving the mask CD signature using a CDC200™ tool from Carl Zeiss SMS. The mask layout used is a line and space dark level of a 45nm node Non Volatile Memory (NVM). A prerequisite to improve intra-field CDU at wafer level is to characterize the mask CD signature precisely. For CD measurement on mask the newly developed wafer level CD metrology tool WLCD32 of Carl Zeiss SMS was used. The WLCD32 measures CD based on proven aerial imaging technology. The WLCD32 measurement data show an excellent correlation to wafer CD data. For CDU correction the CDC200™ tool is used which utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements™) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed.In the present work we will demonstrate a closed loop process of WLCD32 and CDC200™ to improve mask CD signature as one of the main contributors to intra-field wafer CDU. Furthermore we will show that the process window will be significantly enlarged by improvement of intra-field CDU. An increase of 20% in exposure latitude was observed.