Electrical characterization of metal-insulator-semiconductor diodes fabricated from laser-ablated Yba 2 Cu 3 O 7−δ /yttria-stabilized zirconia films on Si substrates,"

YBa2Cu3O7−δ /yttria-stabilized zirconia (YSZ)/silicon superconductor–insulator–semiconductor capacitors are characterized with capacitance-voltage (C-V) measurements at different gate-voltage sweep rates and under bias-temperature cycling. It is shown that ionic conduction in YSZ causes both hysteresis and stretch-out in room-temperature C-V curves. A thermally activated process with an activation energy of about 39 meV in YSZ and/or at YSZ/Si interface is attributed to trapping/detrapping mechanisms in the SiOx interfacial layer between YSZ and Si. The negative mobile ions in YSZ can be moved by an applied electric field at room temperature and then ‘‘frozen’’ with decreasing temperature, giving rise to adjustable threshold voltages at low temperatures.

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The camera used in Canadian surveys is a typical, strong, simple, and effective one of its kind; its construction can be seen from Fig. 2, which is taken from the paper just mentioned. It weighs 20 Ibs. complete in case with twelve loaded plate-holders. The lens is a Zeiss Tessar, Series 111, the focal length of which is 164 mm. The horizontal and vertical fields are 51' and 37" respectively.