Epitaxial lift-off (ELO) is a post-growth process that allows the active part of a semiconductor structure to be transferred from its growth substrate to a new one. This is a well established technique for III-V semiconductors, and has previously been demonstrated for ZnSe-based alloys grown on GaAs using a metastable MgS sacrificial layer, taking advantage of the huge difference in etch rates of MgS and ZnSe.We report here the first successful extension of this process to II-VI layers grown on InP by using a MgSe sacrificial layer. By using the correct etching conditions, MgSe has been found to work effectively as a sacrificial layer. 5 Â 5 mm 2 square pieces of material can be lifted and deposited on glass substrates without any deterioration in the structural or optical properties; as confirmed by optical microscopy and photoluminescence (PL) measurements.