No abstract

With the emergence of cloud computation, we are facing the rising waves of big data. It is our time to leverage such opportunity by increasing data usage both by man and machine. We need ultra-mobile computation with high data processing speed, ultra-large memory, energy efficiency and multi-functionality. Additionally, we have to deploy energy-efficient multi-functional 3D ICs for robust cyber-physical system establishment. To achieve such lofty goals we have to mimic human brain, which is inarguably the world's most powerful and energy efficient computer. Brain's cortex has folded architecture to increase surface area in an ultra-compact space to contain its neuron and synapses. Therefore, it is imperative to overcome two integration challenges: (i) finding out a low-cost 3D IC fabrication process and (ii) foldable substrates creation with ultra-large-scale-integration of high performance energy efficient electronics. Hence, we show a low-cost generic batch process based on trench-protect-peel-recycle to fabricate rigid and flexible 3D ICs as well as high performance flexible electronics. As of today we have made every single component to make a fully flexible computer including non-planar state-of-the-art FinFETs. Additionally we have demonstrated various solid-state memory, movable MEMS devices, energy harvesting and storage components. To show the versatility of our process, we have extended our process towards other inorganic semiconductor substrates such as silicon germanium and III-V materials. Finally, we report first ever fully flexible programmable silicon based microprocessor towards foldable brain computation and wirelessly programmable stretchable and flexible thermal patch for pain management for smart bionics.

In this work we demonstrate torsion based complementary MEMS logic device, which is capable, for the first time, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0–10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.