This study focuses on the development of a feasible, low-cost, and reliable electrodeposition technique for metal (Ti and Mn) oxide-based active memristive layers on Ti. The developed deposition process is based on Mn(CH3SO3)2-assisted anodic oxidation of Ti via cyclic voltammetry in 100 mM Methanesulfonic acid (CH3SO3H) aqueous solution. According to our experimental observations, the use of Mn2+ as an additive can promote the anodic oxidation of Ti and enables the deposition of thicker oxide layers as compared to the deposits obtained without additives. Various concentrations of Mn2+ are elaborated in this study, and the resulting thicknesses are evaluated using reflectometry, cross-sectional scanning electron microscopy (SEM), and depth-profiling X-ray photoelectron spectroscopy (XPS). Accordingly, 10 mM Mn2+ in the solution yields the deposition of manganese oxide (MnOx), whereas the solution with 100 mM Mn2+ promotes the deposition of thicker titanium oxide (TiOx), as compared to the solution without Mn2+. Surface morphologies of the structures are identified using both Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Memristive characteristics of the resulting thin films are examined using a sandwich configuration formed by Ag/Metal-Oxide/Ti/Au. Current-Voltage measurements show characteristic memristor bow-tie hysteresis for Ag/TiOx/Ti/Au and Schottky barrier related rectifying properties in specific voltage ranges for Ag/MnOx/Ti/Au structures.

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