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The demand of fast and power efficient spintronic devices with flexibility requires additional energy for magnetization manipulation. Stress/ strain have shown their potentials for tuning magnetic properties to the desired level. Here, we report a systematic study for the effect of both tensile and compressive stresses on the magnetic anisotropy (MA). Further the effect of stress on the domain structure and magnetization relaxation mechanism in a perpendicularly magnetized Co/Pt film has been studied. It is observed that a minimal in-plane tensile strain has increased the coercivity of the film by 33% of its initial value, while a very small change of coercivity has been found under compressive strain. The size of ferromagnetic domains decreases under tensile strain, while no change is observed under the compressive strain. Magnetization relaxation measured at sub-coercive field values yields a longer relaxation time in the strained state. OPEN ACCESS RECEIVED

Organic semiconductor/ferromagnetic bilayer thin films can exhibit novel properties due to the formation of spinterface at the interface. Buckminsterfullerene (C60) has been shown to exhibit ferromagnetism at the interface when it is placed next to a ferromagnet (FM) such as Fe or Co. Formation of a spinterface occurs due to the orbital hybridization and spin-polarized charge transfer at the interface. In this work, we have demonstrated that one can enhance the magnetic anisotropy of the low Gilbert damping alloy CoFeB thin film by introducing a C60 layer. We have shown that anisotropy increases by increasing the thickness of C60, which might be a result of the formation of a spinterface. However, the magnetic domain structure remains the same in the bilayer samples as compared to that in the reference CoFeB film.

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