Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air.
The recent isolation
of two-dimensional (2D) magnets offers tantalizing
opportunities for spintronics and magnonics at the limit of miniaturization.
One of the key advantages of atomically thin materials is their outstanding
deformation capacity, which provides an exciting avenue to control
their properties by strain engineering. Herein, we investigate the
magnetic properties, magnon dispersion, and spin dynamics of the air-stable
2D magnetic semiconductor CrSBr (T
C =
146 K) under mechanical strain using first-principles calculations.
Our results provide a deep microscopic analysis of the competing interactions
that stabilize the long-range ferromagnetic order in the monolayer.
We showcase that the magnon dynamics of CrSBr can be modified selectively
along the two main crystallographic directions as a function of applied
strain, probing the potential of this quasi-1D electronic system for
magnon straintronics applications. Moreover, we predict a strain-driven
enhancement of T
C by ∼30%, allowing
the propagation of spin waves at higher temperatures.
Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS 2 on top of van der Waals FePS 3 . The optimal energy band alignment of this heterostructure preserves light emission of MoS 2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS 2 , an n-type semiconductor, to FePS 3 , a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS 2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS 3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.
The temperature dependent order parameter provides important information on the nature of magnetism. Using traditional methods to study this parameter in two-dimensional (2D) magnets remains difficult, however, particularly for insulating antiferromagnetic (AF) compounds. Here, we show that its temperature dependence in AF MPS3 (M(II) = Fe, Co, Ni) can be probed via the anisotropy in the resonance frequency of rectangular membranes, mediated by a combination of anisotropic magnetostriction and spontaneous staggered magnetization. Density functional calculations followed by a derived orbital-resolved magnetic exchange analysis confirm and unravel the microscopic origin of this magnetization inducing anistropic strain. We further show that the temperature and thickness dependent order parameter allows to deduce the material's critical exponents characterising magnetic order. Nanomechanical sensing of magnetic order thus provides a future platform to investigate 2D magnetism down to the single-layer limit.
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