The effects of the structural morphology of the ZnO thin seed layer composed of nanoparticles grown by dip coating have been investigated on the structural properties of ZnO nanowires grown by chemical bath deposition. It is revealed by scanning electron microscopy that the growth of ZnO nanowires is limited by the mass transport of chemical precursors in solution, leading to the inverse relationship of their average diameter and length with their density. It is shown by transmission electron microscopy and X-ray diffraction measurements that ZnO nanowires epitaxially grow on the seed layer and preferentially nucleate on the free surface of ZnO nanoparticles. The vertical alignment of ZnO nanowires as quantitatively deduced by X-ray pole figures is found to be improved by strengthening the texture of the seed layer along the c axis. Similarly, their density increases, showing that the c polar plane is highly reactive chemically and presents preferential surface nucleation sites. The relationship between the average diameters of ZnO nanoparticles and nanowires is completely driven by the nature of the nucleation site that is strongly dependent upon the growth conditions and upon the structural morphology of the seed layer. The texture, roughness, and porosity of the seed layer are three critical parameters.

International audienceThermal imaging of individual silicon nanowires (Si NWs) is carried out by a scanning thermal microscopy (SThM) technique. The vertically aligned 1.7 (micro)m long Si NWs are fabricated combining nanosphere lithography and metal-induced wet chemical etching. A thermal model for the SThM probe is then presented with two steps: a model out of contact which enables a calibration of the probe, and a model in contact to extract thermal parameters from the sample under study. Using this model and the experimental thermal images, we finally determine a mean value of the tip-to-sample thermal contact resistance and a mean value of the Si NWs thermal conductivity. No significant thermal conductivity reduction in comparison with bulk Si is observed for Si NWs with diameters ranging from 200 to 380 nm. However, the technique presented here is currently the only one available to perform thermal measurements simultaneously on an assembly of individual one-dimensional nanostructures. It enables to save time and to make a statistical processing of the thermal data in order to deduce a reliable mean thermal conductivity, even when the tip-to-sample thermal contact resistance cannot be considered neither negligible in comparison with the Si NW intrinsic thermal resistance nor constant from one Si NW to another