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We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.

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This paper presents a dominant channel occupancy (DCO) mechanism for the Wi-Fi backscatter uplink in the industrial Internet of things (IIoT). The DCO provides high-priority channel access and reliable burst transmission to the Wi-Fi backscatter devices, thereby enabling the Wi-Fi backscatter tag to deliver its tag information to the Wi-Fi reader without interference from neighboring legacy Wi-Fi devices to guarantee the timeliness and reliability of the IIoT system. For the former, we consider three types of medium access control (MAC) configurations: "carrier sense multiple access with collision avoidance (CSMA/CA) starting with short inter-frame space (SIFS)", "freezing of the backoff period", and "reduced CW min ." In addition, the DCO uses the SIFS between burst packets to guarantee reliable burst transmission. To verify the effectiveness of DCO and determine a proper value for MAC parameters, we conduct experimental simulations under IEEE 802.11n PHY/MAC environments. The simulation results show that the reduced CW min has the most significant effect on the channel occupancy. The Wi-Fi backscatter devices achieve much higher throughput than the separate cases when two or more configurations are used simultaneously. Moreover, the results exhibit that the use of SIFS between consecutive packets supports reliable burst transmission regardless of the transmission of the legacy Wi-Fi devices in the vicinity.