A systematic study of time-resolved photoluminescence spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si-doping concentration in the barriers has been carried out. The 10 K recombination lifetimes in the QWs depend strongly on the Si-doping in the barriers, decreasing from ∼80 to ∼20 ns as the Si-doping level increases from 2×1018 to 1×1019 cm−3. The separation between the spontaneous and stimulated emission (SE) peaks and a shift of the emission peak to longer wavelengths with delay time after a pulsed excitation decrease with increasing Si doping. The increased recombination rate, the decrease of peak shift with delay time, and the reduced separation between the spontaneous and SE peaks with increasing Si doping are attributed to the screening of piezoelectric field by carriers originated from Si-doped barriers.

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We have constructed a compact extended-cavity diode laser (ECDL) that is based on a Littman configuration with a grating and a reflector. The whole structure is installed in a 2-inch kinematic mount. ECDLs operating at 852 nm (Cs 2 line), 894 nm (Cs 1 line), 780 nm (Rb 2 line), and 794 nm (Rb 1 line) were fabricated and tested. As a result of the performance test, up to 9 GHz continuous tuning without mod-hop could be obtained by tuning with a piezoelectric transducer only. The linewidth from the beat-note spectrum of two ECDLs was about 200 kHz.

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