Perovskite solar cells (PSCs) exceeding a power conversion efficiency (PCE) of 20% have mainly been demonstrated by using mesoporous titanium dioxide (mp-TiO) as an electron-transporting layer. However, TiO can reduce the stability of PSCs under illumination (including ultraviolet light). Lanthanum (La)-doped BaSnO (LBSO) perovskite would be an ideal replacement given its electron mobility and electronic structure, but LBSO cannot be synthesized as well-dispersible fine particles or crystallized below 500°C. We report a superoxide colloidal solution route for preparing a LBSO electrode under very mild conditions (below 300°C). The PSCs fabricated with LBSO and methylammonium lead iodide (MAPbI) show a steady-state power conversion efficiency of 21.2%, versus 19.7% for a mp-TiO device. The LBSO-based PSCs could retain 93% of their initial performance after 1000 hours of full-Sun illumination.

Low-temperature-processed perovskite solar cells (PSCs), especially those fabricated on flexible substrates, exhibit device performance that is worse than that of high-temperature-processed PSCs. One of the main reasons for the inferior performance of low-temperature-processed PSCs is the loss of photogenerated electrons in the electron collection layer (ECL) or related interfaces, i.e., indium tin oxide/ECL and ECL/perovskite. Here, we report that tailoring of the energy level and electron transporting ability in oxide ECLs using Zn2SnO4 nanoparticles and quantum dots notably minimizes the loss of photogenerated electrons in the low-temperature-fabricated flexible PSC. The proposed ECL with methylammonium lead halide [MAPb(I0.9Br0.1)3] leads to fabrication of significantly improved flexible PSCs with steady-state power conversion efficiency of 16.0% under AM 1.5G illumination of 100 mW cm(-2) intensity. These results provide an effective method for fabricating high-performance, low-temperature solution-processed flexible PSCs.

The device performance of sensitizer-architecture solar cells based on a CuSbS2 light sensitizer is presented. The device consists of F-doped SnO2 substrate/TiO2 blocking layer/mesoporous TiO2 /CuSbS2 /hole-transporting material/Au electrode. The CuSbS2 was deposited by repeated cycles of spin coating of a Cu-Sb-thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7(2,1,3-benzothiadiazole)) (PCPDTBT) was used as the hole-transporting material. The best-performing cell exhibited a 3.1 % device efficiency, with a short-circuit current density of 21.5 mA cm(-2) , an open-circuit voltage of 304 mV, and a fill factor of 46.8 %.

We synthesized single-crystalline Sn-based oxides for use as electron-transporting layers (ETLs) in perovskite solar cells (PSCs).