Electrode structures of Pt/RuO2/Ru on polysilicon and (Ba,Sr)TiO3(BST) thin films on Pt/RuO2/Ru/poly-Si structures were prepared by metal-organic chemical vapor deposition (MOCVD). The barrier layers of RuO2/Ru deposited by MOCVD showed a stable interface and did not affect the surface morphology of the platinum bottom electrode even at a high annealing temperature of 800°C in oxygen ambient. Contacts in the annealed state up to 800°C exhibited linear current-voltage characteristics with a constant specific contact resistance of 5.0 ×10-5 Ω·cm2. The excellent leakage current characteristics and dielectric properties of 50-nm-thick BST films were due to the stable and smooth morphologies of the bottom electrodes at BST deposition temperature.