Wireless biomedical implantable devices on the mm-scale enable a wide range of applications for human health, safety, and identification, though energy harvesting and power generation are still looming challenges that impede their widespread application. Energy scavenging approaches to power biomedical implants have included thermal [1–3], kinetic [4–6], radio-frequency [7–11] and radiative sources [12–14]. However, the achievement of efficient energy scavenging for biomedical implants at the mm-scale has been elusive. Here we show that photovoltaic cells at the mm-scale can achieve a power conversion efficiency of more than 17 % for silicon and 31 % for GaAs under 1.06 μW/mm2 infrared irradiation at 850 nm. Finally, these photovoltaic cells demonstrate highly efficient energy harvesting through biological tissue from ambient sunlight, or irradiation from infrared sources such as used in present-day surveillance systems, by utilizing the near infrared (NIR) transparency window between the 650 nm and 950 nm wavelength range [15–17].
GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm2) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally. Voltage is limited by generation–recombination dark current attributed to perimeter sidewall surface recombination based on the measurements of variable cell area. Bulk and perimeter recombination coefficients of 1.464 pA/mm2 and 0.2816 pA/mm, respectively, were extracted from dark current measurements. Resulting power conversion efficiency is strongly dependent on cell area, where current GaAs of 1-mm2 indoor photovoltaic cells demonstrates power conversion efficiency of approximately 19% at 580 lx of white LED illumination. Reductions in both bulk and perimeter sidewall recombination are required to increase maximum efficiency (while maintaining small cell area near 1 mm2) to approach the theoretical power conversion efficiency of 40% for GaAs cells under typical indoor lighting conditions.
Arrays
of floating neural sensors with a high channel count that
covers an area of square centimeters and larger would be transformative
for neural engineering and brain–machine interfaces. Meeting
the power and wireless data communications requirements within the
size constraints for each neural sensor has been elusive due to the
need to incorporate sensing, computing, communications, and power
functionality in a package of approximately 100 μm on a side.
In this work, we demonstrate a near-infrared optical power and data
communication link for a neural recording system that satisfies size
requirements to achieve dense arrays and power requirements to prevent
tissue heating. The optical link is demonstrated using an integrated
optoelectronic device consisting of a tandem photovoltaic cell and
microscale light-emitting diode. End-to-end functionality of a wireless
neural link within system constraints is demonstrated using a prerecorded
neural signal between a self-powered CMOS integrated circuit and single
photon avalanche photodiode.
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