Phase shifting metasurfaces typically consist of an ordered metallic geometry that is patterned onto a dielectric substrate and incorporate active devices or materials that enable dynamic tuning. Existing methods at mm-wave and submillimeter bands typically suffer from high losses, which are predominantly produced by the inherent limitations of the tuning elements or materials. This report presents a new, ultra-low-loss and phase-tunable, reflection type metasurface design, which outperforms previously reported technologies in terms of phase shifting and loss. The proposed technique utilizes a variable air cavity, formed between a periodic array and a ground plane, which is controlled by means of a piezoelectric actuator. Two metasurface designs are presented and experimentally tested. Firstly, a square patch element metasurface that is capable of achieving a continuous 180° phase shift across a wide bandwidth, between 35 and 65 GHz. Also presented is a double-cross element metasurface that provides full 360° phase control between 57 and 62 GHz. The variable air cavity is controlled by means of a piezoelectric actuator that supports and varies the height of a ground plane, providing highly accurate, millisecond, displacement. Unlike conventional tuning methods, the tuning mechanism, in this case the moving ground plane, introduces no additional sources of loss and enables an average loss performance of 1 dB. Full-wave simulations are presented and experimentally validated with measurements of both metasurface prototypes. The proposed approach is scalable from microwave up to THz frequencies, due to the electro-mechanical and low loss nature of the tuning.

A low loss metamaterial unit cell is presented with an integrated GaAs air-bridged Schottky diode to produce a dynamically tunable reflective phase shifter that is capable of up to 250° phase shift with an experimentally measured average loss of 6.2 dB at V-band. The air-bridged Schottky diode provides a tuneable capacitance in the range between 30 and 50 fF under an applied reverse voltage bias. This can be used to alter the resonant frequency and phase response of a split patch unit cell of a periodic metasurface. The air-bridged diode die, which is flip-chip soldered to the patch, has ultra-low parasitic capacitance and resistance. Simulated and measured results are presented which verify the potential for the attainment of diode switching speeds with acceptable losses at mmWave frequencies. Furthermore the study shows that this diode-based unit cell can be integrated into metamaterial components, which have potential applications in future mmWave antenna beam-steering, intelligent reflecting surfaces for 6G communications, reflect-arrays, transmit-arrays or holographic antennas.

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Metasurfaces with sub‐wavelength nanoscale features have emerged as a platform to achieve desirable electromagnetic responses. However, it remains technically challenging to fabricate metasurfaces in large size and at low cost for mass production. This work demonstrates a 200 mm wafer‐scale Al:ZnO metasurface coating based on deep‐UV lithography. The metasurfaces are targeted to achieve infrared (IR) reflectivity and emissivity characteristics at bandwidths across the two atmospheric windows in the IR spectrum. The wafers demonstrate a high uniformity of optical response with tailored reflectivity of around 50% at the 3–5 µm mid‐wave IR band and less than 10% at the 8–13 µm long‐wave IR band. This article furthermore shows that the design principle allows achieving a wide range of dual‐band reflectivity values using a single underlying materials stack, offering a versatile platform. The proposed approach is compatible with CMOS‐compatible mass‐production manufacturing and brings IR metasurface coatings closer to commercially relevant and scalable technology.

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